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Showing items 1-10 of 20 (2 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface
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MINGHWEI HONG; Huang, DJ; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation
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Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
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Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing
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Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; Hong, M; Kwo, J; Lee, HY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor
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Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
Showing items 1-10 of 20 (2 Page(s) Totally)
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